| PART |
Description |
Maker |
| 1SV229 |
TOSHIBA Variable Capacitance Diode Silicon Epitaxial Planar Type
Variable Capacitance Diode VCO for UHF Band Radio
|
Toshiba Semiconductor
|
| BBY40 BBY40_1 BBY40/T1 BBY40-T BBY40-15 BBY40-2015 |
VHF BAND, 26 pF, 30 V, SILICON, VARIABLE CAPACITANCE DIODE
From old datasheet system
VHF variable capacitance diode(VHF 可变电容二极
HI-SPEED AT2- USB 2.0 TO ATA/ATAPI BRIDGE
|
NXP Semiconductors
Philips Semiconductors
Philipss
Quanzhou Jinmei Electro...
|
| IDT54FCT162374ATPFB IDT54FCT162374TPAB IDT54FCT162 |
FAST CMOS 16-BIT REGISTER (3-STATE)
Variable Capacitance Diode for Digital audio; Ratings VR (V): 10; Characteristics n: 2.40 to 3.05; Characteristics rs (ohm) max: 1.8; Characteristics C (pF) max: C1 = 2.60 to 2.90 C3 = 0.97 to 1.08; Characteristics CVR/CVR: 1/3; Cl: -; Package: MP6
Variable Capacitance Diode for VCO; Ratings VR (V): 15; Characteristics n: 2.35 to 2.55; Characteristics rs (ohm) max: 0.6; Characteristics C (pF) max: C1=6.62 to 7.02 C4=2.60 to 2.95; Characteristics CVR/CVR: 1/4; Cl: -; Package: MP6
Variable Capacitance Diode for VCO; Ratings VR (V): 15; Characteristics n: 2.10 to 2.40; Characteristics rs (ohm) max: 0.75; Characteristics C (pF) max: C0.5 = 7.38 to 7.92 C2.5 = 3.26 to3.58; Characteristics CVR/CVR: 0.5/2.5; Cl: -; Package: MP6
Variable Capacitance Diode for VCO; Ratings VR (V): 10; Characteristics n: 1.680 to 1.750; Characteristics rs (ohm) max: 1.2; Characteristics C (pF) max: C1 = 21.50 to 24.00 C2 = 12.50 to 14.50; Characteristics CVR/CVR: 1/2; Cl: 17; Package: SFP
Variable Capacitance Diode for VCO; Ratings VR (V): 15; Characteristics n: 2.43 to 2.57; Characteristics rs (ohm) max: 0.75; Characteristics C (pF) max: C0.5 = 7.30 to 7.70 C2.5 = 2.90 to 3.18; Characteristics CVR/CVR: 0.5/2.5; Cl: -; Package: MP6
Variable Capacitance Diode for VCO; Ratings VR (V): 10; Characteristics n: 2.30 to 2.46; Characteristics rs (ohm) max: 0.4; Characteristics C (pF) max: C0.5 = 18.5 to 20.0 C2.5 = 7.3 to 8.6; Characteristics CVR/CVR: 0.5/2.5; Cl: 7.95; Package: SFP
Variable Capacitance Diode for Digital audio; Ratings VR (V): 10; Characteristics n: 2.28 to 2.90; Characteristics rs (ohm) max: 1.1; Characteristics C (pF) max: C1 = 2.90 to 3.30 C3 = 1.12 to 1.30; Characteristics CVR/CVR: 1/3; Cl: -; Package: MP6
Variable Capacitance Diode for VCO; Ratings VR (V): 10; Characteristics n: 2.02 to 2.26; Characteristics rs (ohm) max: 0.4; Characteristics C (pF) max: C0.5 = 18.5 to 20.0 C2.5 = 8.55 to 9.45; Characteristics CVR/CVR: 0.5/2.5; Cl: -; Package: MP6
Variable Capacitance Diode for VCO; Ratings VR (V): 10; Characteristics n: 2.62 min; Characteristics rs (ohm) max: 0.4; Characteristics C (pF) max: C1 = 14.6 to 15.8 C4 = 5.20 to 5.80; Characteristics CVR/CVR: 1/4; Cl: 5.85; Package: EFP
Variable Capacitance Diode for VCO; Ratings VR (V): 15; Characteristics n: 3.0 min; Characteristics rs (ohm) max: 2; Characteristics C (pF) max: C1 = 41.6 to 49.9 C4 = 10.1 to 14.8; Characteristics CVR/CVR: 1/4; Cl: 12.45; Package: SFP
Variable Capacitance Diode for VCO; Ratings VR (V): 15; Characteristics n: 1.73 to 2.10; Characteristics rs (ohm) max: 0.7; Characteristics C (pF) max: C1 = 2.35 to 2.70 C3 = 1.22 to 1.42; Characteristics CVR/CVR: 1/3; Cl: -; Package: MP6
|
Integrated Device Technology, Inc.
|
| HVD362 |
Diodes>Variable Capacitance
Variable Capacitance Diode for VCO
|
RENESAS[Renesas Electronics Corporation]
|
| HVC417C |
Diodes>Variable Capacitance
Variable Capacitance Diode for tuner
|
RENESAS[Renesas Electronics Corporation]
|
| HVU17 |
Diodes>Variable Capacitance
Variable Capacitance Diode for VCO
|
Renesas Electronics Corporation
|
| BB639C Q62702-B695 |
Silicon Variable Capacitance Diode (For tuning of extended frequency band in VHF TV / VTR tuners) VHF BAND, 39 pF, 35 V, SILICON, VARIABLE CAPACITANCE DIODE
|
Johanson Dielectrics, Inc.
SIEMENS AG
Infineon
Siemens Group
SIEMENS[Siemens Semiconductor Group]
|
| 1N5448A 1N5465A 1N5467B JAN1N5469B 1N5445C 1N5446C |
22 pF, 30 V, SILICON, VARIABLE CAPACITANCE DIODE, DO-7
15 pF, 30 V, SILICON, VARIABLE CAPACITANCE DIODE, DO-7
20 pF, 30 V, SILICON, VARIABLE CAPACITANCE DIODE, DO-7
27 pF, 30 V, SILICON, VARIABLE CAPACITANCE DIODE, DO-7
18 pF, 30 V, SILICON, VARIABLE CAPACITANCE DIODE, DO-7
33 pF, 30 V, SILICON, VARIABLE CAPACITANCE DIODE, DO-7
100 pF, 30 V, SILICON, VARIABLE CAPACITANCE DIODE, DO-7
|
|
| MA4ST550 MA4ST551 MA4ST552 MA4ST553 MA4ST554 MA4ST |
L-KU BAND, 2.7 pF, 22 V, SILICON, HYPERABRUPT VARIABLE CAPACITANCE DIODE
L-KU BAND, 0.8 pF, 22 V, SILICON, HYPERABRUPT VARIABLE CAPACITANCE DIODE
High Q Hyperabrupt Tuning Varactors
L-KU BAND, 1.8 pF, 22 V, SILICON, HYPERABRUPT VARIABLE CAPACITANCE DIODE
|
MACOM[Tyco Electronics]
|
| 1N5455 1N5446B 1N5465A 1N5470A 1N5475C 1N5443A 1N5 |
82 pF, 30 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE, DO-7
18 pF, 30 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE, DO-7
15 pF, 30 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE, DO-7
33 pF, 30 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE, DO-7
10 pF, 30 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE, DO-7
100 pF, 30 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE, DO-7
68 pF, 30 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE, DO-7
8.2 pF, 30 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE, DO-7
20 pF, 30 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE, DO-7
39 pF, 30 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE, DO-7
|
MICROSEMI CORP-LOWELL
|
| GC3202-00 GC3205-50 |
UHF BAND, 21.5 pF, 180 V, SILICON, VARIABLE CAPACITANCE DIODE
C BAND, 2.25 pF, 45 V, SILICON, VARIABLE CAPACITANCE DIODE
|
MICROSEMI CORP-LOWELL
|
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